| Sepember 13, 2011 |
Session 1: Opening Session
Chairperson: J. Koike |
| 9:20-9:30 |
Opening Remarks: K. Ueno, Chair of Asian Session [Shibaura
Inst. of Tech.]
Award Ceremony |
9:30-10:10
(1-1) |
Keynotes: The Revitalization for Japan - the Platinum
Society- [Mitsubishi Research Inst.] H. Komiyama |
10:10-10:50
(1-2) |
Keynotes: The Integrated Foundry: A New R&D Approach
for the ‘Collaborate to Make’ Era [tei
Solutions] S. Ikeda |
| (Break 10 min) |
Session 2: Low-k Dielectrics (1)
Chairperson: S Fukuyama |
11:00-11:30
(2-1) |
Invited: Reliability in Device Technologies: Molecular
Modeling, Complex Structures and Properties
[Stanford Univ.] R. Dauskardt |
11:30-11:50
(2-2) |
Super-low-k SiOCH Film with Sufficient Film
Modulus and High Thermal Stability Created
by Controlling Molecular-level-structure
in Neutral-beam-enhanced CVD [Tohoku Univ.]
A. Wada, T. Sasaki, S. Yasuhara, and S. Samukawa |
11:50-12:10
(2-3) |
Robust Ultra Low-k Dielectric, Fluorocarbon,
Deposition by Microwave Plasma Enchanced
Chemical Vapor Deposition [Tokyo Electron
Tech. Development Inst.] Y. Kikuchi, Y Kobayashi,
K. Miyatani, K. Kawamura, T. Nemoto, T. Nozawa,
and T. Matsuoka |
| (Lunch 1 hour 20 min) |
Session 3: Low-k Dielectrics (2)
Chairpersons: T. Kokubo |
13:30-14:00
(3-1) |
Invited: Materials Challenges in the Integration of
Ultra Low-k Dielectric Films [Intel] M. Moinpour |
14:00-14:20
(3-2) |
Advanced UV-assisted Restoration for PECVD
SiOCH Films with k=2.0 [ASM] Y. Kimura, D.
Ishikawa, A. Nakano, A. Kobayashi, K. Matsushita,
D. de Roest, and N. Kobayashi |
14:20-14:40
(3-3) |
Process Optimization for Improved Compatibility
with Organic Non-porous Low-k Dielectric
Fluorocarbon on Advanced Cu Interconnects
[1Tohoku Univ., 2Tokyo Electron Tech. Development Inst.] X.
Gu1, Y. Tomita1, T. Nemoto1,2, K. Miyatani2, A. Saito2, Y. Kobayashi2, A. Teramoto1, R. Kuroda1, S. Kuroki1, T.Nozawa2, T. Matsuoka2, S. Sugawa1, and T. Ohmi1 |
14:40-15:00
(3-4) |
In-situ Analysis of Modification on Porous
SiOCH During and After O2 Plasmas [Nagoya Univ.] K. Asano, H. Yamamoto,
K. Ishikawa, K. Takeda, H. Kondo, M. Sekine,
and M. Hori |
| (Break 15 min) |
Session 4: Metallization (1)
Chairperson: M. B. Takeyama |
| 15:15-15:35 |
AMC highlights: [Stanford Univ.] R. Dauskardt |
15:35-16:05
(4-1) |
Invited: Performance and Reliability of Cu Mn Alloy
Interconnects [IBM] T. Nogami |
16:05-16:25
(4-2) |
Characterization of CVD-Mn Barrier Layers
Using X-ray Absorption Fine Structure [1Synchrotron Soleil, 2IMEC, 3Tohoku Univ., 4National Inst. for Standards and Tech.] J.
M. Ablett1, C. J. Wilson2, N. M. Phuong3, J. Koike3, Z. Tokei2, G. E. Sterbinsky4, and J. C. Woicik4 |
16:25-16:45
(4-3) |
Thermal Stability of MnOx Diffusion Barrier
Layer Formed by Chemical Vapor Deposition
[Tohoku Univ.] N. M. Phuong, Y. Sutou, and
J. Koike |
| (Break 15 min) |
Session 5: Metallization (2)
Chairperson: O. Nakatsuka |
17:00-17:30
(5-1) |
Invited: 64 nm Pitch Cu Dual damascene Interconnects
with Self-aligned Via using Pitch Split Double
Patterning Scheme [1Toshiba America, 2IBM, 3Renesas, 4ST Microelectronics] T.Usui1, S.T. Chen2, H. Tomizawa1, M. Tagami3, H. Shobha2, M. Sankarapandian2, O. Van der Straten2, J. Kelly2, D. Canaperi2, T. Levine2, Y. Yin2, D. Horak2, M. Ishikawa1, Y. Mignot4, C-S. Koay2, S. Burns2, S. Halle2, H. Kato1, G. Landie4, Y. Xu2, A. Scaduto2, E. McLellan2, J. Maniscalco2, T. Vo2, S. Cohen2, J.C. Arnold2, M. Colburn2, and T. Spooner2
|
17:30-17:50
(5-2) |
Modified Thermal Response Model for Joule
Heating of Multi-level Cu/Low-k Interconnects
[Renesas Electronics] S. Yokogawa, H. Tsuchiya,
and T. Shimizu |
17:50-18:10
(5-3) |
Oxidation Characteristics of Thin Al-Mo Alloy
Films as a Metal Capping Layer on Cu [Kitami
Insti. of Tech.] M. B. Takeyama, and A. Noya |
| September 14, 2011 |
Session 6: Metallization (3)
Chairperson: K. Maekawa |
9:30-10:00
(6-1) |
Invited: Metal Deposition Technologies for the 2010’s;
Changes and Inflections [Applied Materials]
J. Forster |
10:00-10:20
(6-2) |
Control of Composition and Nanostructure
in CoW Film by CVD and ALD to Develop Barrier
Property for Sidewalls of Interconnects in
ULSI [1Taiyo-Nippon Sanso, 2Univ. of Tokyo] H. Shimizu1,2, K. Sakoda1, T. Momose2, and Y. Shimogaki2 |
10:20-10:40
(6-3) |
Highly Scalable and Low Resistance Cu BEOL
with CVD-Ru Process [Samsung Electronics]
T. Matsuda, E. J. Jung, S. W. Choi, J. Lee,
H. Kim, J.-H. Yun, G. Choi, H-K. Kang, and
C. Chung |
| (Break 15 min) |
Session 7: Metallization (4)
Chairperson: T. Nemoto |
10:55-11:25
(7-1) |
Invited: Recent Advances in Fundamental Understanding
of Reliability Phenomena in Downscaled Copper
Interconnects [IMEC] K. Croes, C. J. Wilson,
M. Lofrano, G.P. Beyer and Z. Tokei |
11:25-11:45
(7-2) |
In-situ Spectroscopic Ellipsometry of Cu
Deposition Process from Supercritical Fluids
-An Evidence for an Abnormal Surface Layer
Formation- [Univ. of Yamanashi] T. Sasaki,
Y. Tamegai, M. Watanabe, L. Jin, and E. Kondoh |
11:45-12:05
(7-3) |
Radical-enhanced ALD TiN Barrier for the
Buried Word-line (bWL) Application [Applied
Materials] H. Ai, T. Yu, B. Zheng, J. Yuan,
H. Lam, and A. Sundarrajan |
| (Lunch 1 hour 25 min) |
Session 8: CMP
Chairperson: J. Amanokura |
13:30-14:00
(8-1) |
Invited: Direct CMP of High Porosity Ultra Low k Materials
[IMEC] N. Heylen |
14:00-14:30
(8-2) |
Invited: Cu Corrosion Caused by Concentration Cell
Effect in Cu-CMP Process [CASMAT] K. Okutani |
14:30-14:50
(8-3) |
Study of Surface Potential on Interconnection
Structure with Electrostatic Force Microscopy
[Ebara] S. Shima, A. Fukuda, Y. Wada, K.
Tokushige, A. Fukunaga, and M. Tsujimura |
14:50-15:10
(8-4) |
Spatial Fourier Transform Analysis of Polishing
Pad Surface Topography [Kyushu Inst. of Tech.]
P. Khajornrungruang, K. Kimura, K. Suzuki,
and T. Kushida |
15:10-15:30
(8-5) |
Feasibility Study for Reuse of Chemical Mechanical
Polishing Wastewater [Hitachi] M. Kawakubo,
S. Watanabe, T. Sugaya, and Y. Yamada |
| (Break 15 min) |
Session 9: MEMS
Chairpersons: N. Hata |
15:45-16:15
(9-1) |
Invited: MEMS Vibration Energy Harvesting for Ubiquitous
Sensor Networks [NTT Microsystem Integration
Lab.] K. Ono, N. Sato, T. Shimamura, M. Ugajin,
T. Sakata, S. Mutoh, and Y. Sato |
16:15-16:45
(9-2) |
Invited: MEMS Sensors for Automotive Applications
[Denso] H.Wado, Y.Takeuchi, Y.Hattori |
16:45-17:05
(9-3) |
RF MEMS Planar Solenoidal Inductor with Wide
Tunability [Tokyo Insti. of Tech.] A. Shirane,
H. Ito, N. Ishihara, and K. Masu |
Poster Session and Banquet (17:30-19:30)
Chairperson: H. Kawasaki |
| Low-k Dielectrics |
| P-1 |
Integration of an Organic Ultra Low-k Material
(k=2.2) and Applying a Plasma Damage Recovery
Process [1CASMAT, 2Sumitomo Bakelite] M. Hirai1, Y. Akiyama1, K. Koga1, H. Kawakami1, S. Komatsu2, N. Saruya1, and K. Nakatani1 |
| P-2 |
Advanced Spin-On Material of Nano-Cluster
ing Silica (NCS) for k=2.0 & ≦1.9[JGC
Catalysts and Chemicals] H. Arao, M. Hashimoto,
and M. Egami |
| P-3 |
Evaluation of SOD Materials for Narrow Pitch
Process of 60nm 1/2 Pitch. [CASMAT] Y. Akiyama |
| Metallization |
| P-4 |
Interface Reaction Behavior Between Mn and
SiO2 and the Effects of Adsorbed Moisture in
SiO2 [Tohoku Univ.] B. T. Bae, and J. Koike |
| P-5 |
Ru and Pt Films Fabrication for 3D Capacitor
Electrodes Using Supercritical Fluid Deposition
Technique [Univ. of Tokyo] K. Watanabe, T.
Momose, and Y. Shimogaki |
| P-6 |
Barrier Reliability Evaluation of Electroless
Diffusion Barriers and Organosilane Monolayer
by Bias Temperature Stress (BTS) Tests [Shibaura
Inst. of Tech.] A. Mitsumori, S. Fujishima,
and K. Ueno |
| P-7 |
Mass Production Reactor design for Cu Interconnects
on 12-inch Wafers Using Supercritical Fluid
Deposition [Univ. of Tokyo] T. Momose, M.
Sugiyama, and Y. Shimogaki |
| P-8 |
Adsorption and Desorption Behavior of Organic
Additives During Copper Electrodeposition
by Rapid Solution Exchange [Osaka Pref. Univ.]
T. Saito, Y. Miyamoto, S. Hattori, N. Okamoto,
and K. Kondo |
| P-9 |
Current Induced Grain Growth of Electroplated
Copper Film [1Shibaura Inst. of Tech., 2Toray Research Center] L. Razak1, T. Yamaguchi1, S. Akahori2, H. Hasimoto2, and K. Ueno1 |
| P-10 |
RuO2 Deposition Using Supercritical Fluid Deposition
(SCFD) [Univ. of Tokyo] K. Jung, T. Momose,
and Y. Shimogaki |
| P-11 |
Making More Reliable Copper Interconnects
Using Barrierless Cu Metallization Method
[Asia-Pacific Insti. of Creativity] C. H.
Lin |
| P-12 |
Atomic Layer Deposition of Novel RuAIO Thin
Films for Seddless Copper Electroplating
Applications [Yeungnam Univ. Univ. of Ulsan]
T. Cheon1, S.-H. Choi1, K.-S. Park2. S. kim2, and S.-H. kim1 |
| P-13 |
Electroless Deposition of Ruthenium Thin
Films on Palladium Catalyzed Substrates [Osaka
Pref. Univ.] T. Saito, Y. Yoshida, Y. Takagi,
N. Okamoto, and K. Kondo |
| P-14 |
Interfacial Adhesion Energy of ALD RuAlO
Thin Film Between Cu and SiO2: Effect of the Composition of RuAlO Thin
Film [1Andong National Univ., 2Yeungnam Univ.] J.-K. Kim1, T. Cheon2, S.-H. Kim2, and Y.-B. Park1 |
| P-15 |
Atomic Layer Deposition of Ru Thin Films
Using a Novel Ru(0) Metallorganic Precursor
as a Seed Layer for Copper Metallizations
[Yeungnam Univ.] S.Yeo, S.-H. Choi, T. Cheon,
and S.-H. Kim |
| P-16 |
Plasma-Enhanced Atomic Layer Deposition of
Ni and Ni Silicidation [Yonsei Univ.] J.
Yoon, W.-H. Kim, J. Song and H. Kim |
| CMP |
| P-17 |
CMP Characteristics of SiC Wafers Using a
Simultaneous Double-side CMP Machine -Effects
of Atmosphere and Ultraviolet Light Irradiation-
[1Kyushu Univ., 2Kanazawa Inst. of Tech., 3Konica Minolta Business Technologies, 4Koshiyama Science and Tech. Foundation, 5Fujikoshi Machinery] O. Ohnishi1, T. Doi1, S. Kurokawa1, T. Yamazaki1, M. Uneda1,2, K. Kitamura3, T. Yin1, I. Koshiyama4 and K. Ichikawa5 |
| P-18 |
Development of New Groove Patterns on CMP
Pad -Slurry Flow Analysis Using Digital Image
Processing- [1Kyushu Univ., 2Kanazawa Inst. of Tech.] T. Yamazaki1, T. K. Doi1, S. Kurokawa1, M. Uneda1,2, O. Ohnishi1,K. Seshimo1, and Y. Aso1 |
| P-19 |
Performance Evaluation Method of CMP Pad
Conditioner Using Digital Image Correlation
(DIC) Processing [1Kyushu Univ., 2Kanazawa Inst. of Tech.] M. Uneda1,2, T. Omote2, K. Ishikawa2, T. Doi 1, S. Kurokawa1 and O. Ohnishi1 |
| P-20 |
Single-Wafer Cleaning Using Capillary Wave
Propagation [1Kaijo, 2Shibaura Inst. of Tech.] K. Suzuki1, Y. Imazeki1, K. Han1, T. Shimura1, J. Soejima1, T. Tatsumi2, K. Kikuchi2, and Y. Koike2 |
| P-21 |
Performance of Water-soluble Fullerenol as
Novel Functional Fine Particles for Sapphire
CMP [Kyushu Inst. of Tech.] K. Suzuki, T.
Saitou, T. Korezawa, P. Khajornrungruang,
and K. Kimura |
| P-22 |
Influence of Wafer Edge Geometry on CMP Removal
Rate Profile - About Wafer Edge Roll-Off
and Notch - [1Ebara.,2Fujitsu Semiconductor] A. Fukuda1, T.Fukuda2, A. Fukunaga1, and M. Tsujimura1 |
| Package |
| P-23 |
Effect of Interfacial Microstructures on
the Mechanical Reliability of SAC305 Pb-free
Solder Bump for 3D IC Packaging [1Andong National Univ., 2Korea Inst. of Industrial Tech.] J.-M. Kim1, M.-H. Jeong1, S. Yoo2, and Y.-B. Park1 |
| P-24 |
Interfacial Reaction Effect on Electrical
Reliability of Cu pillar/Sn-3.5Ag Bump Structure
for TSV Applications [Andong National Univ.]
B.-H. Kwak, J.-M. Kim, M.-H. Jeong, and Y.-B.
Park |
| P-25 |
Experiment and Computational Stress Analysis
for Shear Performance of PoP Bottom Package
Assemblies with Edge and Corner Bonding Materials
[1Waseda Univ., 2A*STAR] H. Shi1, F. Che2, and T. Ueda1 |
| P-26 |
Investigation of Various Options of CTBGA
Adhesives for Drop Performance Enhancements
in Portable Electronic Products [Waseda Univ.]
H. Shi, and T. Ueda |
| P-27 |
Heat and Ultraviolet Dual-curable Edge Bonding
Materials for Ball Grid Array Packages and
the Impact on Solder Joint Reliability [Waseda
Univ.] H. Shi, and T. Ueda |
| P-28 |
Experiment and Numerical Analysis for Thermal
Cycling Reliability of PSvfBGA Assemblies
with Edge and Corner Bond Adhesives 1[Waseda Univ., 2A*STAR] H. Shi1, F. Che2, S. Gao2, and T. Ueda1 |
| MtM, Emerging Technologies |
| P-29 |
Fabrication and Electrical Properties of
Nanocarbon/Metal Hybrid Interconnects [1Shibaura Inst. of Techn., 2LEAP.] M. Takagi1, T. Waku1, Y karasawa1, S. Kuwahara1, N. Sakauma2, A. kajita2, T. Sakai2, and K. Ueno1 |
| P-30 |
High Aspect Hole Filling with Composition
Controlled GeSbTe Film by Chemical Vapor
Deposition [1Meiji Univ., 2Gas-phase Growth, 3Toyota Technological Inst.] T. Horiike1, S. Hamada1, T. Uno1, N. Sawamoto1, H. Machida2, M. Ishikawa2, H. Sudo2, Y. Ohshita3, and A. Ogura1 |
| MtM, 3D |
| P-31 |
Application of Electro-less Ni Plating for
TSV Cu ECP Seed Layer [1Philtech, 2Univ. of Tokyo] S. Nishihara1, E. Haikata1, Y. Furumura1, and T. Ohba2 |
| P-32 |
Conformal Copper Coating of True 3D Through-holes
Using Supercritical Carbon Dioxide [1Univ. of Yamanashi, 2Fujikura] M. Watanabe1, Y. Takeuchi1, T. Ueno1, M. Matsubara1, E. Kondoh1, S. Yamamoto2, N. Kikukawa2, and T. Suemasu2 |
| P-33 |
Adsorption of Pd Nanoparticle Catalyst for
Conformal Electroless Plating of Barrier
Layer in a High Aspect Ratio TSV [1Kansai Univ. 2Toray Research Center, 3National Inst. of Information and Communication
Tech.] R. Arima1, F. Inoue1, H. Miyake1, T. Shimizu1, T. Ito2, H. Seki2, Y. Shinozaki2, T. Yamamoto2, S. Tanaka3, and T. Terui3, and S. Shingubara1 |
| P-34 |
12 Inch Bumpless Wafer-On-Wafer (WOW) Fully
Integrated 3DIC Process [1ITRI, 2Univ. of Tokyo] S. C. Liao1, C. H. Lin1, P. J. Tzeng1, J. C. Chen1 , S. C. Chen1, C. Y. Wu1, C. C. Chen1, Y. C. Hsin1, Y. F. Hsu1, S. H. Shen1, C. H. Chen1, C.C. Wang1, D. Y. Shu1, T. C. Hsu1, C. H. Ho1, Young Suk Kim2, H. Kitada2, N. Maeda2, K. Fujimoto2, S. Kodama2, T. Ohba2,T. K. Ku1, and M. J. Kao1 |
| September 15, 2011 |
Session 10: MtM, Nanocarbon Interconnects
Chairpersons: H. Shibata |
9:30-10:00
(10-1) |
Invited: Understanding of Interface Properties in
Graphene FETs [Univ. of Tokyo] K. Nagashio
and A. Toriumi |
10:00-10:20
(10-2) |
A Study on Electrical Resistance of CNTs
and Their Metal Contacts Using Simplified
Test Structure [LEAP] T. Saito, M. Wada,
A. Isobayashi, Y. Yamazaki, M. Katagiri,
M. Kitamura, B. Ito, T. Matsumoto, N. Sakuma,
A. Kajita, and T. Sakai |
10:20-10:40
(10-3) |
Fabrication and Characterization of Planarized
Carbon Nanotube Via Interconnects [LEAP]
M. Katagiri, M. Wada, B. Ito, Y. Yamazaki,
M. Suzuki, M. Kitamura, T. Saito, A. Isobayashi,
A. Sakata, N. Sakuma, A. Kajita, and T. Sakai |
Session 11: MtM, Emerging Technologies
Chairpersons: S. Yokogawa |
10:40-11:10
(11-1) |
Invited: Functional Oxide Devices for Non-volatile
and Interconnect Switching [AIST] H. Akinaga
and H. Shima |
11:10-11:30
(11-2) |
Nondestructive Characterization of Size and
Size Variability of Nanostructures [AIST]
N. Hata and H. Akinaga |
| (Lunch 1 hour 30 min) |
Session 12: MtM, 3D (1)
Chairpersons: T. Ohba |
13:00-13:30
(12-1) |
Invited: Development of Deep Via Forming Technology
with Conventional Memory Device [Hynix Semiconductor]
J. H. Kim, M. S. Suh, Q. H. Chung, J. S.
Oh, and K. Y. Byun |
13:30-14:00
(12-2) |
Invited: The New Era of 3DIC Collaboration [SPIL]
Max Lu |
Session 13: MtM 3D (2)
Chairpersons: Y-C. Joo |
14:00-14:20
(13-1) |
Surface Microroughness-induced Leakage Current
in Through-Silicon Via Interconnects [1Univ. of Tokyo, 2Fujitsu Lab.] H. Kitada1,2, Y. Morikawa1, N. Maeda1, K. Fujimoto1, S. Kodama1, Y. S. Kim1, Y. Mizushima1,2, T. Nakamura2, and T. Ohba1 |
14:20-14:40
(13-2) |
Comprehensive Study of Local Strain Structures
with High Strain Resolution for Through-Silicon
Via Interconnects [1Nagoya Univ., 2Univ. of Tokyo, 3Fujitsu Lab.] O. Nakatsuka1, H. Kitada2, Y. S. Kim2, Y. Mizushima3, T. Nakamura3, T. Ohba2, and S. Zaima1
|
14:40-15:00
(13-3) |
Novel TSV Leakage Current Evaluation Using
IR-Optical Beam Irradiation [1Fujitsu Lab., 2Univ. of Tokyo, 3Hamamatsu Photonics] Y. Mizushima1,2, H. Kitada1,2, K. Koshikawa3, S. Suzuki3, T. Nakamura1, and T. Ohba2 |
| (Break 15 min) |
Session 14: MtM 3D (3)
Chairpersons: D-Y. Shu |
15:15-15:45
(14-1) |
Invited: 3D Interconnect Metrology in ITRI [ITRI]
Y. S. Ku |
15:45-16:15
(14-2) |
Invited: Electrical and Mechanical Reliability of
3-D Integrated Circuit Using Though-silicon
Via (TSV) [Seoul National Univ.] Y.-C. Joo,
H.-A-S. Shin, H.-W. Yeon, S.-H. Hwang, B.-J.
Kim, and S.-Y. Jung |
16:15-16:35
(14-3) |
Thermal Cycling Reliability of Chip Array
Thin Core Ball Grid Array Assemblies with
Fast Cure and Reworkable Capillary Flow Underfill
[Waseda Univ.] H. Shi, and T. Ueda |
| 16:35-16:45 |
Closing Remark: H. Kawasaki [Mitsubishi Heavy Industries] |
|
