| October 10, 2019 |
Session 1: Opening Session
Chairperson: H. Machida (Gas-Phase Growth) |
| 9:30-9:50 |
Opening Remarks: S. Yokogawa, General Chair [The Univ. of Electro-Communications]
Award Ceremony : |
9:50-10:30
(1-1) |
Plenary: The Future of Technology Scaling [Intel] R. A. Brain |
| 10:30-10:40 |
(Break 10 min) |
Session 2: Advanced Integration and Processes
Chairperson: J. Leu (National Chiao Tung Univ.) |
10:40-11:10
(2-1） |
Invited: Challenges Influencing the Next Generation BEOL Interconnect Technology
[IBM Research] G. Bonilla |
11:10-11:30
(2-2） |
Saturation of Sb1+ Concentration in Heavily Sb-doped n+-Ge Epitaxial Layers
[Nagoya Univ.] ○J. Jeon , S. Shibayama, and O. Nakatsuka |
11:30-11:50
(2-3） |
Impact of Ge Pre-amorphization Implantation (Ge PAI) on CoTi/n+-Si Contact
in Co Interconnects [1Chinese Academy of Sciences, 2Univ. of Chinese Academy of Sciences (UCAS)] ○D. Zhang1,2, A. Du1, J. Xu1*, S. Mao1, X. Luo1,2, Y. Liu1,2, J. Gao1, G. Wang1, J. Li1, W. Wang1,2, D. Chen1,2, C. Zhao1,2, T. Ye1,2 and J. Luo1,2* |
| 11:50-12:50 |
(Break for Lunch) |
Session 3: Emerging Technology (STT-MRAM, ReRAM)
Chairperson: X. Gu (Western Digital) |
12:50-13:20
(3-1） |
Invited: Impact of STT-MRAM and CMOS/MTJ Hybrid NV-Logic from NV-MCU to NV- Brain-Inspired AI Processors [Tohoku Univ.] T. Endo |
13:20-13:50
(3-2） |
Invited: Etch Challenges and Solutions in MRAM Production [Leuven Instruments] K.
Xu |
13:50-14:10
(3-3） |
Low-energy Switching of a FM/HM/FM Sandwich Structure Driven by Spin-Orbit Torque [Chinese Academy of Sciences] ○S. Wang , M. Yang, J. Luo, C. Zhao, W. Wang, and T. Ye |
| 14:10-14:20 |
(Break 10 min) |
Session 4: Advanced Metallization
Chairperson: M. Baklanov (North China Univ.) |
14:20-14:50
(4-1） |
Invited: Integration
options for alternative metals [imec] ○C. J. Wilson, V. V. Gonzalez, G. Murdoch,
C. Aldelmann, M. van der Veen, A. Gupta, I. Ciofi, and Z. Tokei |
14:50-15:20
(4-2） |
Invited: Development of a CMOS-compatible Contact Technology for III-V Materials [CEA Leti] P. Rodriguez |
15:20-15:40
(4-3） |
Improvement of the Thermal Stability for Ultra-thin Tantalum Silicide by
Carbon Pre-silicidation Implantation [1Institute of Microelectronics of Chinese Academy of Sciences, 2Univ. of Chinese Academy of Sciences] J. Xu1, J. Gao1, X. Luo1,2, D. Zhang1,2, S. Mao1, J. Li1, C. Zhao1,2,*, W. Wang1,2, B. Gao1, D. Chen1,2, T. Ye1,2 and J. Luo1,2 |
| 15:40-15:50 |
(Break 10 min) |
Session 5: CMP, Cleaning
Chairperson: K. Suzuki (Kyushu Institute of Technology) |
15:50-16:20
(5-1） |
Invited: Determining Instantaneous Removal Rates in Metal Chemical Mechanical Planarization
[The Univ. of Arizona/Araca Inc.] A. Philipossian |
16:20-16:40
(5-2） |
Development of Chemical Mechanical Planarization(CMP) for 4H-SiC substrate
by water-soluble cluster of Fullerene [1Kyushu Institute of Technology, 2National Taiwan Univ. of Science and Technology] ○ Y.-H. Tsai1, C.-C. A.Chen2, K. Suzuki1, and S.-F. Chiu2 |
16:40-17:00
(5-3） |
Study on Chemical factors on Nano Colloidal Silica fine particles using
Critic acid for Cu-CMP [Kyushu Inst. of Technology] ○S. Sirisawat, F. Hisayoshi, P. Khajornrungruang, and K. Suzuki |
17:00-17:20
(5-4） |
Effect of Conditioner Disc Wear on Frictional, Thermal, Kinetic and Pad
Micro-Textural Attributes of Silicon Dioxide and Tungsten Chemical Mechanical
Planarization [1Univ. of Arizona, 2Araca Inc.] J. C. Mariscal1, H. Dadashazar1,2, J. McAllister1, Y. Sampurno1,2, and A. Philipossian1,2 |
Poster Session (17:30-19:30)
Chairperson: K. Maekawa (Renesas Electronics) |
| P-1 |
Synthesis of Ni Thin Film by Supercritical Fluid Chemical Deposition Technique
[Univ. of Yamanashi] ○Sudiyarmanto, and E. Kondoh |
| P-2 |
Low Temperature ALD of Silicon Nitride Using Hydrazine-based Compound [1TAIYO NIPPON SANSO, 2Semiconductor National Institute for Materials Science] ○H. Murata1, N. Tajima2, and K. Suzuki1 |
| P-3 |
Development of novel Cu electroplating for electronic interconnects in advanced packaging [1Kobe Univ., 2Daicel] ○T. Mahiko1,2, and M. Nagata1 |
| P-4 |
Advanced Physical Modelling Method to the LSI Package Deformation with the HOG Image Feature [1Fujitsu Laboratories, 2Socionext] N. Itani1, T. Soeda1, M. Oshima2, and H. Matsuyama2 |
| P-5 |
Plasma-enhanced Atomic Layer Deposition of Low-k Silicon Carbonitride Films [National Chiao Tung Univ.] S.-W. Fan, Y.-L. Hsu, and J. Leu |
| P-6 |
Chip-level Electromigration Evaluation using GENG estimations [The Univ.
of Electro Communications] ○S. Yokogawa, K. Kunii, and R. Nakazato |
| P-7 |
Enhancement of thermal stability of NiGe films below 10 nm thickness by
carbon pre-germanidation implantation [1Chinese Academy of Sciences (IMECAS), 2Univ. of Chinese Academy of Sciences] J. Xu1, J. Liu1, G. Wang1, X. Luo1,2, Dan Zhang1,2, S. Mao1, J. Li1, C. Zhao1,2,*, W. Wang1,2, B. Gao1, D. Chen1,2, T. Ye1,2, and J. Luo1,2 |
| P-8 |
An optimized method for critical cleaning of sidewall residues in the fabrication
of 8-inch CMOS Compatible STT-MRAM [1Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), 2Univ. of Chinese of Academy Sciences (UCAS), 3Beihang Univ., 4Jiangsu Leuven Instruments] T. Yang1,2, M. Yang1, Y. Cui1, K. Cao3, Z. Guo3, J. Gao1, X. He1, J. Xu1, J. Li1, W. Wang1,2, D. Che4, K. Xu4, C .Zhao1,2*, W. Zhao3, and J. Luo1,2* |
| P-9 |
Cu(111) orientation control on thin TaWN alloy barrier [1Kitami Institute of Technology, 2Toray Research Center] M. B. Takeyama1, M. Sato1, and M. Yasuda2 |
| P-10 |
Thermal stress relaxation of cobalt-passivated nano-twinned copper films [National Chiao Tung Univ.] H.-H. Liu, I-H. Tseng, C. Chen, and J. Leu○ |
| P-11 |
Exchange coupling between perpendicular Co and IrMn interface in Pt/Co/IrMn
trilayers [1Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), 2Univ. of Chinese of Academy Sciences (UCAS)] Y. Li1, M. Yang1*, T. Yang1,2, Y. Cui1, J. Xu1, C. Zhao1,2, W. Wang1,2, and J. luo1,2* |
| P-12 |
Preparation of Graphene/Carbon Nanotubes Composite Films for Thermal Packaging
Applications [1Shanghai Univ., 2Chalmers Univ. of Technology ] ○J. Xie1 G. Yuan1 , H. Li1 , J. Liu 1 ,2 , and Y. Tian1 |
| P-13 |
Withdrawn |
| P-14 |
Effect of P/B Ion Implantation after Germanidation on NiGe Films Formed on both n+- and p+-Ge [1Institute of Microelectronics, Chinese Academy of Sciences, 2Univ. of Chinese Academy of Sciences (UCAS)] ○X. Luo1,2, G. Wang1, J. Xu1, D. Zhang1,2, Y. Liu1,2, S. Mao1, S. Liu1, J. Li1, W. Wang1,2, D. Chen1,2, C. Zhao1,2, T. Ye1,2, and J. Luo1,2 |
| P-15 |
Effects of Ammonia-based Functional Water on Copper Surface Preparation
for Wafer Rinsing Step [1Organo, 2 Nagaoka Univ. of Technology] ○D. Yano1,2, and A. Kawai2 |
| P-16 |
Ultra low-k organosilica films with benzene bridge and small pore size
[1North China Univ. of Technology, 2Technische Universit?t Chemnitz, 3China Agricultural Univ.] C. Liu1, C. Lv1, N. Kohler2, X. Wang1, H. Lin3, Z. He3, S. Wei1#, J. Zhang1, and M. R. Baklanov1 |
| P-17 |
Cu (111) preferential orientation on ZrNx films [Kitami Institute of Technology] M. Sato, and M. B. Takeyama |
| P-18 |
Metal/insulator thermally conductive layers for miniaturized planar Si-nanowire
thermoelectric generator [1Waseda Univ., 2National Institute for Materials Science] S. Ma1, T. Zhan1, R. Yamato1, M. Xu1, H. Takezawa1, K. Mesaki1, M. Tomita1, Y.-J. Wu 2, Y. Xu 2, and T. Watanabe1 |
| P-19 |
The effect of γ-ray irradiation on the SOT magnetic films and devices [1Chinese Academy of Sciences, 2Univ. of Chinese of Academy Sciences (UCAS)] T. Z. Yang1, W. L. Yang1(Equal contribution), C. H. Wan1, X. F. Han1*, Y. Cui1*and J. Luo1,2* |
| P-20 |
Plasma- enhanced chemical vapor deposition of vertically aligned carbon
nanotube arrays grown on Zinc oxide films [1Shanghai Univ., 2Chalmers Univ. of Technology] ○H. Li1 G. Yuan1 , J. Xie1 , J. Liu 1,2 and Y. Tian1 |
| P-21 |
Initial changes of Cu surfaces in H2O2-BTA aqueous solutions studied by using microfluidic reactor [1Univ. Yamanashi, 2Ebara] ○E. Kondoh 1, M. Toyama1, L. Jin1, S. Hamada2, S. Shima2, and H. Hiayama2 |
| P-22 |
Pore Morphology of Ultra-Low-k Organosilicate Dielectrics Thin Films by UV Annealing [1National Chiao Tung Univ., 2 National Synchrotron Radiation Research Center, 3Russian Technological Univ. (MIREA)] Y.-H. Wu1, W.-T. Chuang2, A. S. Vishnevskiy3, D. S. Seregin3, M. R. Baklanov3, K. A. Vorotilov3, and J. Leu1* |
| P-23 |
Temperature evolution of sol-gel PMO low-k films with different organic bridges [1MIREA Russian Technological Univ (RTU MIREA), 2 North China Univ of Technology
(NCUT) ] D. Seregin1 , A. Vishnevskiy1 , G. Orlov1, V. Storonkin1, I. Ovchinnikov1, K. Vorotilov1, and M. Baklanov 1,2 |
| P-24 |
Humidity Reliability of a Commercial Flash Memory for Long Term Storage
[1Shibaura Institute of Tech.(SIT), 2Univ. of Electro Communication, 3SIT Research Center for Green Innovation] ○T. Murota1, T. Mimura1, P. Gomasang1, S. Yokogawa2, and K. Ueno1,3 |
| P-25 |
Etching of OSG low-k films in CF4 plasma at different temperatures [Lomonosov Moscow State Univ.] ○A. Palov , E. Voronina , T. Rakhimova, O. Proshina, and Y. Mankelevich |
| P-26 |
Fabrication and electrical properties of Ni-based alloy thin film by electro
or electroless deposition [1Osaka Prefecture Univ., 2Osaka Univ.] ○ M. Rindo1, N. Okamoto1, T. Saito1, and A. Kitajima2 |
| P-27 |
Sputtering and etching of ethylene bridged low-k film s by neutral fluorine
[1Lomonosov Moscow State Univ., 2North China Univ. of Technology] ○ A. Palov1, E. Voronina1, and S. Wei2 |
| P-28 |
Effect of a metal interlayer under Au catalyst on metal-assist chemical
etching of Si substrate [Kansai Univ.] ○T. Yorioka, S. Hanatani, T. Shimizu, T. Ito, and S. Shingubara |
| Late News Poster |
| P-LN1 |
Interfacial Reaction of Cu6Sn5 intermetallic between molten Sn-0.7Cu-0.2Cr solder and Cu substrate [1Korea Institute of Industrial Technology, 2Korea Univ.] J. Son1,2, D.-Y. Yu1,2, D.-J. Byun2, J. Bang1* |
| P-LN2 |
Effect of Ni3Sn2 Growth on Thermal Resistance of AuSn/ENIG Solder Joint in Flip-Chip LED
Package [1Korea Institute of Industrial Technology (KITECH), 2 Hanyang Univ.] T.-Y. Lee1,2, M.-S. Kang1, Y.-H. Kim2, S. Yoo1, and ○M.-S. Kim1 |
| P-LN3 |
Nitrogen-Doped Amorphous-Carbon as Efficient Moisture Barrier on Copper
[1Shibaura Institute of Technology, 2 SIT Research Center for Green Innovation] ○P. Gomasang1 , T. Murota1 , and K. Ueno1,2 |
| P-LN4 |
Boron diffusion and Crystal structure analysis of MTJ films with different
TMR ratio according to annealing temperature [Toray Research Center] ○Y. Shimizu, M. Yasuda, and M. Nishimura |
| October 11, 2019 |
Session 1: Opening Session 2
Chairperson: H. Machida (Gas-Phase Growth) |
9:30-10:10
(1-2） |
Plenary: Advanced Flash Memory Technology for the Big Data Era [Western Digital Japan] A. Koike |
| 10:10-10:20 |
(Break 10 min) |
Session 6: Thin films and dielectrics
Chairperson: O. Nakatsuka (Nagoya Univ.) |
10:20-10:50
(6-1） |
Invited: Advanced Cu interconnects with Ru liner for low resistance and highly reliable
7nm BEOL technology and beyond [IBM Research] K. Motoyama |
10:50-11:10
(6-2） |
Formation of chemically inert interface between Al and Al3Nb thin films [Kitami Institute of Technology] M. B. Takeyama, M. Sato,
and A. Noya |
11:10-11:30
(6-3） |
Light emission from pristine and Tb doped nanoporous organosilicate films [North China Univ. of Technology] J. Zhang*, Y. Wang, J. Zhang, H. Xu, C. Liu, S. Wei, and M. R. Baklanov |
11:30-11:50
(6-4） |
Investigation of Molybdenum interconnects [Fudan Univ.] ○T. Teng , and X.-P. Qu |
| 11:50-12:50 |
(Break for Lunch) |
Session 7: 3D, TSV, PKG
Chairperson: T. Saito (Osaka Prefecture Univ.) |
12:50-13:20
(7-1） |
Invited: ITRI's Micro LED Development Progress for Signage, Gaming and AR Applications
[Industrial Technology Research Institute (ITRI)] Y.-H. Fang |
13:20-13:50
(7-2） |
Invited: Low Temperature Cu-Cu Direct Bonding for 3D Integration and Advanced Packaging
[National Chiao Tung Univ.] Y.-C. Tsai (on behalf of K.-N. Chen) |
13:50-14:10
(7-3） |
Measured Stress Comparison of Annular-Trench-Isolated (ATI) TSV with Cu
and Solder Core [National Institute of Advanced Industrial Science and
Technology (AIST)] ○W. Feng, N. Watanabe, H. Shimamoto, M. Aoyagi, and K. Kikuchi |
14:10-14:30
(7-4） |
Study of Cu pad thermal expansion effect on fine-pitch Cu-Cu hybrid bonding technology [Sony Semiconductor Solutions] ○H. Hashiguchi, M. Haneda, Y. Kagawa, M. Horiike, T. Hirano, S. Kobayashi,
T. Hirano, and H. Iwamoto |
| 14:30-14:40 |
(Break 10 min) |
Session 8: Next Generation Interconnect
Chairperson: A. Kajita (Toshiba Memory) |
14:40-15:10
(8-1） |
Invited: Non-equilibrium nanoparticle composite film process using reactive plasmas
[Kyushu Univ.] K. Koga |
15:10-15:30
(8-2） |
Layer Number Dependence of MoCl5 Intercalation to Few-Layer Graphene [1Shibaura Institute of Technology, 2KU Leuven, 3imec] ○E. Ketsombun1, X. Wu 2,3 , I. Asselberghs3 , S. Achra 2,3 , C. Huyghebaert3 , D. Lin3 , Z. Tokei3 , and K. Ueno1 |
15:30-15:50
(8-3） |
Vertically Stacked Suspended SiGe/Ge Nanowires Fabricated by 3D Ge Condensation for Optoelectronic Applications [Stanford Univ.] J. Suh*,
Q. Li, J. van de Groep, M. Brongersma, and K. C. Saraswat |
| 15:50-16:00 |
Closing Remarks: |
|
