Dear Sir/Madam,


Advanced Metallization Conference 2009, 19th Asian Session: ADMETA 2009 will be held from October 19 to 21, 2009. The conference is organized to stimulate and enhance the research and development of ULSI interconnect technology; and each year since 1989 the conference has been held at about the same time in both Japan and USA, and has showcased remarkable interconnect technology development in Asia. Current active development of Cu multilayer wiring technology is aimed at feature sizes of less than 50nm. Securing good reliability between barrier metal and low k in Low k/Cu wiring schemes has become an important topic. In addition, the application of Cu wiring has been broadened to the memory market and is widely used for Flash and DRAM. Moreover, there is advancement in the introduction of metal deposition for transistor surroundings such as for Silicide and Metal Gate, etc. The progress of miniaturization technology for packaging is rapid, and concepts for integrated wiring technology between Si chips and mounting substrates are requested. Contributions of papers are highly solicited addressing these topics, and related areas such as materials, interconnect design, reliability, equipment, and cost reduction, etc. where there is no shortage of problems to be solved.
In addition to the main conference, for the second year in a row, a special workshop will be held to address the problems of future interconnect technology. The theme of this year’s workshop is “3-Dimensional Interconnect Technology”. This conference offers an excellent opportunity to learn about the most recent R&D activities in interconnect metal deposition and related fields from around the world. Now is the time for you to join us.


ADMETA 2009 Chairman:
Yukihiro Shimogaki (the University of Tokyo)

ADMETA 2009 Program Chairman:
Seiichi Kondo (Selete)

ADMETA 2009 Public Relations Chairman:
Nobuhiro Shimoyama (NTT Microsystem Integration Laboratories)